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postgraduate thesis: Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material,its Schottky contacts, P-N junctions and heterostructures

TitleSome studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material,its Schottky contacts, P-N junctions and heterostructures
Authors
Huang, Yan黃燕
Advisors
Advisor(s):Fung, SHYBeling, CD
Issue Date2005
PublisherThe University of Hong Kong (Pokfulam, Hong Kong)
Citation
Huang, Y. [黃燕]. (2005). Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material, its Schottky contacts, P-N junctions and heterostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3155967
DegreeDoctor of Philosophy
SubjectGallium nitride.
Semiconductors - Defects.
Epitaxy.
Dept/ProgramPhysics
Persistent Identifierhttp://hdl.handle.net/10722/40144
HKU Library Item IDb3155967

 

DC FieldValueLanguage
dc.contributor.advisorFung, SHY-
dc.contributor.advisorBeling, CD-
dc.contributor.authorHuang, Yan-
dc.contributor.author黃燕-
dc.date.issued2005-
dc.identifier.citationHuang, Y. [黃燕]. (2005). Some studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material, its Schottky contacts, P-N junctions and heterostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b3155967-
dc.identifier.urihttp://hdl.handle.net/10722/40144-
dc.languageeng-
dc.publisherThe University of Hong Kong (Pokfulam, Hong Kong)-
dc.relation.ispartofHKU Theses Online (HKUTO)-
dc.rightsThe author retains all proprietary rights, (such as patent rights) and the right to use in future works.-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.source.urihttp://hub.hku.hk/bib/B31559670-
dc.subject.lcshGallium nitride.-
dc.subject.lcshSemiconductors - Defects.-
dc.subject.lcshEpitaxy.-
dc.titleSome studies of structural and point defects in gallium nitride and their influence in determining the properties of the bulk material,its Schottky contacts, P-N junctions and heterostructures-
dc.typePG_Thesis-
dc.identifier.hkulb3155967-
dc.description.thesisnameDoctor of Philosophy-
dc.description.thesislevelDoctoral-
dc.description.thesisdisciplinePhysics-
dc.description.naturepublished_or_final_version-
dc.description.natureabstract-
dc.identifier.doi10.5353/th_b3155967-
dc.date.hkucongregation2005-
dc.identifier.mmsid991013321209703414-

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